JPS6150350A - 混成集積回路基板 - Google Patents

混成集積回路基板

Info

Publication number
JPS6150350A
JPS6150350A JP17228484A JP17228484A JPS6150350A JP S6150350 A JPS6150350 A JP S6150350A JP 17228484 A JP17228484 A JP 17228484A JP 17228484 A JP17228484 A JP 17228484A JP S6150350 A JPS6150350 A JP S6150350A
Authority
JP
Japan
Prior art keywords
integrated circuit
metal plate
hybrid integrated
slit
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17228484A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564479B2 (en]
Inventor
Norimichi Matsushita
松下　典道
Noriyuki Sakai
酒井　規之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichicon Corp
Original Assignee
Nichicon Capacitor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichicon Capacitor Ltd filed Critical Nichicon Capacitor Ltd
Priority to JP17228484A priority Critical patent/JPS6150350A/ja
Publication of JPS6150350A publication Critical patent/JPS6150350A/ja
Publication of JPH0564479B2 publication Critical patent/JPH0564479B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4878—Mechanical treatment, e.g. deforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Lead Frames For Integrated Circuits (AREA)
JP17228484A 1984-08-18 1984-08-18 混成集積回路基板 Granted JPS6150350A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17228484A JPS6150350A (ja) 1984-08-18 1984-08-18 混成集積回路基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17228484A JPS6150350A (ja) 1984-08-18 1984-08-18 混成集積回路基板

Publications (2)

Publication Number Publication Date
JPS6150350A true JPS6150350A (ja) 1986-03-12
JPH0564479B2 JPH0564479B2 (en]) 1993-09-14

Family

ID=15939070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17228484A Granted JPS6150350A (ja) 1984-08-18 1984-08-18 混成集積回路基板

Country Status (1)

Country Link
JP (1) JPS6150350A (en])

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01100995A (ja) * 1987-10-14 1989-04-19 Denki Kagaku Kogyo Kk 金属ベース回路基板の多量製造方法
JPH01133395A (ja) * 1987-11-19 1989-05-25 Denki Kagaku Kogyo Kk 金属ベース回路基板の多量製造方法
FR2835690A1 (fr) * 2002-02-07 2003-08-08 Possehl Electronic France Sa Procede de realisation industrielle d'elements de dissipation thermique pour support de semi-conducteurs a partir d'une bande de metal
KR100574725B1 (ko) 2003-12-24 2006-04-28 산요덴키가부시키가이샤 혼성 집적 회로 장치의 제조 방법
JP2007036013A (ja) * 2005-07-28 2007-02-08 Sanyo Electric Co Ltd 回路装置およびその製造方法
JP2017059758A (ja) * 2015-09-18 2017-03-23 イビデン株式会社 電子部品搭載用基板及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01100995A (ja) * 1987-10-14 1989-04-19 Denki Kagaku Kogyo Kk 金属ベース回路基板の多量製造方法
JPH01133395A (ja) * 1987-11-19 1989-05-25 Denki Kagaku Kogyo Kk 金属ベース回路基板の多量製造方法
FR2835690A1 (fr) * 2002-02-07 2003-08-08 Possehl Electronic France Sa Procede de realisation industrielle d'elements de dissipation thermique pour support de semi-conducteurs a partir d'une bande de metal
KR100574725B1 (ko) 2003-12-24 2006-04-28 산요덴키가부시키가이샤 혼성 집적 회로 장치의 제조 방법
JP2007036013A (ja) * 2005-07-28 2007-02-08 Sanyo Electric Co Ltd 回路装置およびその製造方法
JP2017059758A (ja) * 2015-09-18 2017-03-23 イビデン株式会社 電子部品搭載用基板及びその製造方法

Also Published As

Publication number Publication date
JPH0564479B2 (en]) 1993-09-14

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